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| Switching Diodes MA6X127 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 0.15 2.8 - 0.3 1.5 - 0.05 6 1.9 0.2 0.95 0.95 5 1 + 0.25 + 0.2 0.65 0.15 0.3 - 0.05 + 0.1 1.1 - 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 -55 to +150 Unit V V mA mA mA C C 1 : Anode 3,4 4 : Anode 1,2 2 : Cathode 1 5 : Cathode 3 3 : Cathode 2 6 : Cathode 4 Mini Type Package (6-pin) Marking Symbol: M2U Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 15 10 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 I Absolute Maximum Ratings Ta = 25C 0.1 to 0.3 0.4 0.2 0.8 0.16 - 0.06 + 0.2 * Four-element contained in one package, allowing high-density mounting * Centrosymmetrical wiring, allowing to free from the taping direction * The mirror image wiring of (MA6X122) * High breakdown voltage (VR = 80 V) 2.9 - 0.05 + 0.2 2 4 3 + 0.1 1.45 I Features 1 MA6X127 IF V F 103 1 Ta = 150C Switching Diodes IR V R 1.6 1.4 100C VF Ta 102 Forward current IF (mA) Reverse current IR (mA) Forward voltage VF (V) Ta = 150C 10 100C 25C - 20C 1 10-1 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 10 mA 3 mA IF = 100 mA 10-2 25C 10-3 10-1 10-4 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 6 VR = 75 V 35 V Ct VR 1 000 f = 1 MHz Ta = 25C 300 IF(surge) tW Ta = 25C IF(surge) tW 1 Terminal capacitance Ct (pF) 5 Forward surge current IF(surge) (A) Reverse current IR (A) 100 30 10 3 1 0.3 0.1 0.03 Non repetitive 1V 10-1 4 10-2 3 2 10-3 1 10-4 -40 0 40 80 120 160 200 0 0 20 40 60 80 100 120 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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